发明名称 METHODS OF FORMING REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE BY PERFORMING A REPLACEMENT GROWTH PROCESS
摘要 Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a stable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density of 104 defects/cm2 or less throughout its entire height. In another case, a metastable replacement fin is grown to a height that is greater than an unconfined metastable critical thickness of the replacement fin material and it has a defect density of 105 defects/cm2 or less throughout at least 90% of its entire height.
申请公布号 SG10201402593Q(A) 申请公布日期 2015.02.27
申请号 SG10201402593Q 申请日期 2014.05.23
申请人 GLOBALFOUNDRIES INC. 发明人 AJEY P. JACOB;MURAT K. AKARVARDAR;JODY FRONHEISER;WITOLD P. MASZARA
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