发明名称 |
Semiconductor Device and Method of Forming Interconnect Structure Over Seed Layer on Contact Pad of Semiconductor Die Without Undercutting Seed Layer Beneath Interconnect Structure |
摘要 |
A semiconductor device has a semiconductor die with a first conductive layer formed over the die. A first insulating layer is formed over the die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is constructed by forming a second insulating layer over the first insulating layer with a second opening having a width less than the first opening and depositing a conductive material into the second opening. The interconnect structure can be a conductive pillar or conductive pad. The interconnect structure has a width less than a width of the first opening. The second conductive layer over the first insulating layer outside the first opening is removed while leaving the second conductive layer under the interconnect structure. |
申请公布号 |
US2015054151(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414503698 |
申请日期 |
2014.10.01 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
Choi Won Kyoung;Marimuthu Pandi C. |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a substrate; forming an insulating layer over the substrate; forming a first conductive layer into an opening of the insulating layer; and forming an interconnect structure including a first width within the opening and below a surface of the insulating layer and a second width less than the first width outside the opening of the insulating layer. |
地址 |
Singapore SG |