MULTILAYER MIM CAPACITOR

摘要

An improved semiconductor capacitor and method of fabrication is disclosed. A MIM stack, comprising alternating first-type and second-type metal layers (each separated by dielectric) is formed in a deep cavity. The entire stack can be planarized, and then patterned to expose a first area, and selectively etched to recess all first metal layers within the first area. A second selective etch is performed to recess all second metal layers within a second area. The etched recesses can be backfilled with dielectric. Separate electrodes can be formed; a first electrode formed in said first area and contacting all of said second-type metal layers and none of said first-type metal layers, and a second electrode formed in said second area and contacting all of said first-type metal layers and none of said second-type metal layers.

主权项

1. A layered structure formed within a cavity comprising:
a plurality of metal layers insulated from each other, said plurality comprising a set of first-type metal layers and a set of second-type metal layers, wherein adjacent pairs of said plurality include a first-type metal layer and a second-type metal layer and wherein relative to said second-type metal layers said first-type metal layers can be selectively etched by a first etch chemistry, and relative to said first-type metal layers said second-type metal layers can be selectively etched by a second etch chemistry.