Silicon Dot Formation by Direct Self-Assembly Method for Flash Memory

摘要

Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.

主权项

1. A method comprising:
spin-coating a substrate with a copolymer solution comprising first and second polymer species over a first dielectric layer disposed over an upper surface of the substrate; annealing the substrate, which results in a self-assembly of the copolymer solution into a phase-separated material, wherein the first polymer species forms a polymer matrix, and the second polymer species forms a pattern of micro-domains within the polymer matrix; removing the second polymer species from the polymer matrix, which replaces the pattern of micro-domains with a substantially identical pattern of first holes within the polymer matrix; and implanting a conductive material through the pattern of holes to form a substantially identical pattern of discrete storage elements within the first dielectric layer.