ENHANCED SWITCH DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

An enhanced switch device and a manufacturing method therefor. The method comprises: providing a substrate, and forming a nitride transistor structure on the substrate; fabricating and forming a dielectric layer on the nitride transistor structure, on which a gate region is defined; forming a groove structure on the gate region; depositing a p-type semiconductor material in the groove; removing the p-type semiconductor material outside the gate region on the dielectric layer; etching the dielectric layer in another position than the gate region on the dielectric layer to form two ohmic contact regions; and forming a source electrode and a drain electrode on the two ohmic contact regions, respectively.

主权项

1. An enhancement mode switching device, comprising:
a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer formed on the nitride transistor structure, wherein a gate region and two ohmic contact regions respectively located at two sides of the gate region are defined on the dielectric layer, and each of the two ohmic contact regions is through the dielectric layer; a groove formed in the gate region and at least partially through the dielectric layer; p-type semiconductor material formed in the groove; and a source electrode and a drain electrode located at the two ohmic contact regions.