发明名称 2D/3D ANALYSIS FOR ABNORMAL TOOLS AND STAGES DIAGNOSIS
摘要 <p>A method for analyzing abnormalities in a semiconductor processing system provides performing an analysis of variance on a production history associated with each of a plurality of tools at each of a plurality of process steps for each of a plurality of processed wafers, and key process steps are identified. A regression analysis on a plurality of measurements of the plurality of wafers at each process step is performed and key measurement parameters are identified. An analysis of covariance on the key measurement parameters and key process steps, and the key process steps are ranked based on an f-ratio, therein ranking an abnormality of the key process steps. Further, the plurality of tools associated with each of the key process steps are ranked based on an orthogonal t-ratio associated with an analysis of covariance, therein ranking an abnormality each tool associated with the key process steps.</p>
申请公布号 KR101496553(B1) 申请公布日期 2015.02.26
申请号 KR20130087888 申请日期 2013.07.25
申请人 发明人
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址