| 摘要 |
<p>The present disclosure provides a semiconductor structure. The semiconductor structure includes: a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high dielectric permittivity dielectric material layer, a capping layer disposed on the high dielectric permittivity dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high dielectric permittivity dielectric material layer have a footing structure.</p> |
