| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming composition which is used to form a pattern-forming mask film for an organic semiconductor film and has etching resistance, and to provide a film thereof.SOLUTION: The film-forming composition contains: a fluororesin containing a repeating unit represented by general formula (1) (Ris a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Ris a C1-C15 linear, C3-C15 branched, or C3-C15 cyclic fluorine-containing hydrocarbon group, provided that hydrogen atoms in the hydrocarbon group may be substituted with fluorine atoms and at least one fluorine atom is contained in the repeating unit); and a fluorine-based solvent. |
