| 发明名称 |
RETENTION BASED DEFECTING IN A HYBRID MEMORY SYSTEM |
| 摘要 |
A first page in a memory unit is programmed with one or more pages of the secondary memory. A first time corresponding to the start of the programming of the first page is recorded. A second time corresponding to the completion of the programming of the one or more pages is recorded. A time difference between the first time and the second time is determined. It is determined if the time difference is greater than a threshold. In response to the time difference being greater than the threshold, a retention based defecting process is for the memory unit is disabled. |
| 申请公布号 |
US2015058683(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201313971781 |
申请日期 |
2013.08.20 |
| 申请人 |
Seagate Technology LLC |
发明人 |
Venkata Sumanth Jannyavula;Kim Young-Pil |
| 分类号 |
G06F3/06;G06F11/07;G06F12/02 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operating a hybrid memory system that includes a primary memory and a secondary memory, the method comprising:
programming a first page in a memory unit with one or more pages of the secondary memory; recording a first time corresponding to the start of the programming of the first page; recording a second time corresponding to the completion of the programming of the one or more pages; determining a time difference between the first time and the second time; determining if the time difference is greater than a threshold; in response to the time difference being greater than the threshold, disabling a retention based defecting process for the memory unit. |
| 地址 |
Cupertino CA US |
