发明名称 |
MAGNETIC STRUCTURE FOR METAL PLATING CONTROL |
摘要 |
Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity. |
申请公布号 |
US2015053563(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201313971881 |
申请日期 |
2013.08.21 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Tsai Ming-Chin;Kao Chung-En;Lu Victor Y. |
分类号 |
H01L21/02;C25D17/00 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. A system for promoting metal plating profile uniformity, comprising:
a magnetic structure configured to modify at least one of an edge plating current or a center plating current associated with a metal plating process for a semiconductor wafer, the magnetic structure positioned at a first position with respect to the semiconductor wafer. |
地址 |
Hsin-Chu TW |