发明名称 MAGNETIC STRUCTURE FOR METAL PLATING CONTROL
摘要 Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.
申请公布号 US2015053563(A1) 申请公布日期 2015.02.26
申请号 US201313971881 申请日期 2013.08.21
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Tsai Ming-Chin;Kao Chung-En;Lu Victor Y.
分类号 H01L21/02;C25D17/00 主分类号 H01L21/02
代理机构 代理人
主权项 1. A system for promoting metal plating profile uniformity, comprising: a magnetic structure configured to modify at least one of an edge plating current or a center plating current associated with a metal plating process for a semiconductor wafer, the magnetic structure positioned at a first position with respect to the semiconductor wafer.
地址 Hsin-Chu TW