发明名称 |
FINFET AND METHOD OF FABRICATION |
摘要 |
An improved finFET and method of fabrication is disclosed. Embodiments of the present invention take advantage of the different epitaxial growth rates of {110} and {100} silicon. Fins are formed that have {110} silicon on the fin tops and {100} silicon on the long fin sides (sidewalls). The lateral epitaxial growth rate is faster than the vertical epitaxial growth rate. The resulting merged fins have a reduced merged region in the vertical dimension, which reduces parasitic capacitance. Other fins are formed with {110} silicon on the fin tops and also {110} silicon on the long fin sides. These fins have a slower epitaxial growth rate than the {100} side fins, and remain unmerged in a semiconductor integrated circuit, such as an SRAM circuit. |
申请公布号 |
US2015056792(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414528266 |
申请日期 |
2014.10.30 |
申请人 |
Intemational Business Machines Corporation |
发明人 |
Adam Thomas N.;Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander |
分类号 |
H01L21/02;H01L29/78;H01L21/84 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |