Methods for Forming Resistive Switching Memory Elements by Heating Deposited Layers

摘要

Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.

主权项

1. A method comprising:
forming a first layer comprising a first metal; forming a second layer comprising a second metal and oxygen,
wherein the first metal is different from the second metal; and heating the first layer and the second layer,
wherein heating causes oxygen migration from the second layer into the first layer and oxidation of the first metal in the first layer thereby forming a first metal oxide in a first portion of the first layer, andwherein the first metal oxide is operable as a resistive switching layer.