发明名称 |
METHOD OF FABRICATING A THIN-FILM DEVICE |
摘要 |
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer. |
申请公布号 |
US2015056747(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414501286 |
申请日期 |
2014.09.30 |
申请人 |
TAKECHI Kazushige;NAKATA Mitsuru |
发明人 |
TAKECHI Kazushige;NAKATA Mitsuru |
分类号 |
H01L21/02;H01L29/66 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a thin-film device, including:
forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interface layers being smaller than a density of oxygen holes in said bulk layer. |
地址 |
Tokyo JP |