THREE-DIMENSIONAL NAND NON-VOLATILE MEMORY DEVICES WITH BURIED WORD LINE SELECTORS

摘要

Three-dimensional NAND stacked memory devices are described that include a stack including alternating word line and dielectric layers and a plurality of NAND strings of memory cells formed in memory holes which extend through the layers. Each memory cell includes a control gate formed by one of the word line layers, and multiple selector devices, each selector device coupled to an end of a corresponding NAND string. The NAND strings are disposed above a substrate, and the selector devices are disposed in the substrate.

主权项

1. A three-dimensional stacked non-volatile memory device comprising:
a stack comprising alternating word line and dielectric layers and a plurality of NAND strings of memory cells formed in memory holes which extend through the layers, each memory cell comprising a control gate formed by one of the word line layers; and a plurality of selector devices, each selector device coupled to an end of a corresponding NAND string, wherein the NAND strings are disposed above a substrate, and the selector devices are disposed in the substrate.