Radio Frequency and Microwave Devices and Methods of Use

摘要

Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

主权项

1. A dual device for controlling two signals in parallel, the dual device comprising:
an ohmic layer disposed on a compound semiconductor layer, the ohmic layer comprising:
a plurality of common ohmic metal fingers disposed on the compound semiconductor layer,a plurality of first ohmic metal fingers having a width less than a width of the common ohmic metal fingers, the first ohmic metal fingers disposed alternating between a portion of the width of the common ohmic metal fingers,a plurality of second ohmic metal fingers having a width less than the width of the common ohmic metal fingers, the second ohmic metal fingers disposed alternating between a portion of the width of the common ohmic metal fingers, each of the second ohmic metal fingers in alignment with a first ohmic metal finger, a gap between each second ohmic metal finger and a respective first ohmic metal finger,a plurality of first gate fingers disposed between the first ohmic metal fingers and a portion of the common ohmic metal fingers,a plurality of second gate fingers disposed between the second ohmic metal fingers and a portion of the common ohmic metal fingers,a plurality of first inner gate pads each disposed between a first ohmic metal finger and a second ohmic metal finger, each of the first inner gate pads coupled to two of the first gate fingers,a plurality of second inner gate pads each disposed between a first ohmic metal finger and a second ohmic metal finger, each of the second inner gate pads coupled to two of the second gate fingers, each of the second of inner gate pads disposed between a second ohmic metal finger and a first inner gate pad, each of the first inner gate pads disposed between a first ohmic metal finger and a second inner gate pad,a plurality of first outer gate pads each disposed proximate a first end of a common ohmic metal finger and coupled to two first inner gate pads though two of the first gate fingers, anda plurality of second outer gate pads each disposed proximate a second end of a common ohmic metal finger and coupled to two second inner gate pads through two of the second gate fingers; a first dielectric material disposed on the ohmic layer; a first metal layer disposed on the first dielectric material, the first metal layer comprising:
a plurality of a common metal strips disposed along the common ohmic metal fingers and coupled through the first dielectric material to the common ohmic metal fingers using vias,a plurality of first metal strips disposed between common metal strips above the first ohmic metal fingers and coupled through the first dielectric material to the first ohmic metal fingers using vias,a plurality of second metal strips disposed between common metal strips above the second ohmic metal fingers and coupled through the first dielectric material to the second ohmic metal fingers using vias,a plurality of first gate metal strips coupled through the first dielectric material to the first gate inner and outer pads using vias, anda plurality of second gate metal strips coupled through the first dielectric material to the second inner and outer gate pads using vias; a second dielectric material disposed on the first metal layer; and a second metal layer comprising:
a common metal contact coupled through the second dielectric material to the common metal strips using vias,a first metal contact coupled through the second dielectric material to first metal strips using vias,a second metal contact coupled through the second dielectric material to second metal strips using vias,a first gate contact coupled through the second dielectric material to the first metal gate strips using vias, anda second gate contact coupled through the second dielectric material to the second gate metal strips using vias.