| 主权项 |
1. A device comprising:
a substrate having a device region, wherein the device region comprises a source region, a gate and a drain region defined thereon; a drift well disposed in the substrate between the gate and drain region, wherein the drift well encompasses the drain region and underlaps a portion of the gate and creates a gate overlap region Ogate in the drift well, wherein the gate comprises one or more doped portions with different dopant concentrations, and the gate comprises a first doped portion and a second doped portion, the interface of the first and second doped portions is at about an inner edge of the drift well; and a source and a drain in the source region and drain region, wherein the drain is separated from the gate on a second side of the gate and the source is adjacent to a first side of the gate. |
