Silicon Dot Formation by Self-Assembly Method and Selective Silicon Growth for Flash Memory

摘要

Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer.

主权项

1. A method of forming discrete storage elements within a memory device, comprising:
disposing a seed layer over a substrate, wherein the seed layer and substrate comprise a substrate material; disposing a first dielectric layer over the seed layer; forming a polymer matrix comprising a pattern of first holes over a substrate; etching through the first holes of the polymer matrix to form a pattern of second holes in the first dielectric layer; and forming discrete storage elements having the substrate material within the second holes of the first dielectric layer through an epitaxial deposition of the substrate material onto the seed layer.