发明名称 |
FinFet Device with Channel Epitaxial Region |
摘要 |
The present disclosure relates to a Fin field effect transistor (FinFET) device having epitaxial enhancement structures, and an associated method of fabrication. In some embodiments, the FinFET device has a semiconductor substrate having a plurality of isolation regions overlying the semiconductor substrate. A plurality of three-dimensional fins protrude from a top surface of the semiconductor substrate at locations between the plurality of isolation regions. Respective three-dimensional fins have an epitaxial enhancement structure that introduces a strain into the three-dimensional fin. The epitaxial enhancement structures are disposed over a semiconductor material within the three-dimensional fin at a position that is more than 10 nanometers above a bottom of an adjacent isolation region. Forming the epitaxial enhancement structure at such a position provides for sufficient structural support to avoid isolation region collapse. |
申请公布号 |
US2015054039(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201313970790 |
申请日期 |
2013.08.20 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Ching Kuo-Cheng;Lin Zhi-Chang;Wang Chao Hsiung;Liu Chi-Wen |
分类号 |
H01L29/78;H01L29/66;H01L21/76 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. A Fin field effect transistor (FinFET) device, comprising:
a semiconductor substrate; a plurality of isolation regions overlying the semiconductor substrate; and a plurality of three-dimensional fins protruding from a top surface of the semiconductor substrate at locations between the plurality of isolation regions, wherein respective three-dimensional fins comprise an epitaxial enhancement structure disposed within the three-dimensional fin at a position that is more than 10 nanometers above a bottom of an adjacent isolation region. |
地址 |
Hsin-Chu TW |