A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single- crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.
申请公布号
WO2014209834(A3)
申请公布日期
2015.02.26
申请号
WO2014US43568
申请日期
2014.06.23
申请人
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY;NEWMAN, NATHAN;VAHIDI, MAHMOUD;LEHNER, STEPHEN;BUSECK, PETER
发明人
NEWMAN, NATHAN;VAHIDI, MAHMOUD;LEHNER, STEPHEN;BUSECK, PETER