| 摘要 |
The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor (sensing element) is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate (1) of n-type conductivity, on whose front (working) side there are p-regions (2, 3); layer (4) (coat) from SiO2; aluminum metallization (5); and a passivating (protective) layer (6). P-region (2), located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions (3) in the form of circular elements (guard rings) are located in the inactive region on the perimeter of the substrate around the central p-region (2) and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter. In layer (4) of SiO2, there are windows (7) to ensure the contact between the metal (aluminum metallization) and the p-region; in the passivating layer over the p-region, located in the central part of the substrate, there are window (8) for contacting with the p-n region in the process of testing and windows (9) for connection of the leads. On the substrate side opposite to the front surface, there is n-region layer (10) and metal layer (11). |
