| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device and a high frequency power amplifier module that reduce a variation in a transmission power characteristic.SOLUTION: The semiconductor integrated circuit device includes, for example, a bandgap reference circuit BGR, a regulator circuit VREG, and a reference voltage correction circuit VREFCTL1 disposed therebetween and including a unity gain buffer BF, and VREFCTL1 corrects a variation in a bandgap voltage Vbg from BGR. VREFCTL1 includes first to third resistance paths having different resistance values (Rr1-Rr3), and performs the correction by selectively supplying a current (I2) reflecting an output voltage of BF to any one of the first to third resistance paths. The selection is performed by connecting a bonding wire BW to any one of terminals REF1-REF3. |
