发明名称 |
METHOD OF REMOVING DEPOSIT IN SEMICONDUCTOR MATERIAL OF GROUPS II-VI BY ANNEALING |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing deposit in a semiconductor material of groups II-VI by annealing.SOLUTION: A method of removing deposit in a solid semiconductor material showing harmonic sublimation of groups II-VI by annealing includes the following continuous steps of: heating the solid semiconductor in an inert gas flow to a temperature T between a first temperature Tcorresponding to the eutectic crystal of a compound of groups II-VI/a group VI element and a second temperature Tcorresponding to the maximum harmonic sublimation temperature; keeping the solid semiconductor material at the temperature T in a neutral gas flow for a time sufficient for removal of the deposit; cooling the solid semiconductor material from the temperature T to the ambient temperature in an inert gas flow at a cooling rate matching the harmonic sublimation line of the solid semiconductor material during cooling; and recovering the solid semiconductor material free of deposit. |
申请公布号 |
JP2015038035(A) |
申请公布日期 |
2015.02.26 |
申请号 |
JP20140216109 |
申请日期 |
2014.10.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
PELLICIARI BERNARD |
分类号 |
C30B33/02;C30B29/48 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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