| 摘要 |
PROBLEM TO BE SOLVED: To provide a super junction trench power MOSFET device for reducing power loss, and a manufacturing method therefor.SOLUTION: A device 100 includes a drain electrode 102 on the bottom surface of an n+ drain layer or a substrate 104. On the upper side of the substrate 104, a p- drift region or a p-type column 106 and an n- drift region or an n-type column 108 are arranged alternately. The p-type(p-) column 106 and the n-type(n-) column 108 located alternately form what is known as super junction. The column 106 of p-type dopant is separated from the adjacent column 108 of n-type dopant by an insulation layer or the column 110. The insulation layer 110 prevents the p-type and n-type columns 106, 108 from being diffused each other, when the structure is heated during manufacture. |
