METHOD FOR FORMING SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES

摘要

Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.

主权项

1. An integrated circuit device, comprising:
at least a pair of conductive structures configured by etching a conductive layer to form sidewalk extending through a thickness of the conductive layer; and a self-aligned airgap formed between the pair of conductive structures and being bounded by a substrate, the sidewalk of the respective conductive structures and a permeable cap layer.