| 发明名称 |
HIGH VOLTAGE DEVICE HAVING SCHOTTKY DIODE |
| 摘要 |
A high voltage device having Schottky diode includes a semiconductor substrate, a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate positioned on the semiconductor substrate. The control gate covers a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate. |
| 申请公布号 |
US2015054116(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414504438 |
申请日期 |
2014.10.02 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tsai Min-Hsuan |
| 分类号 |
H01L29/78;H01L29/06;H01L29/47;H01L27/06;H01L29/872 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high voltage device having Schottky diode comprising:
a semiconductor substrate; a Schottky diode formed on the semiconductor substrate; at least a first doped region having a first conductive type formed under the Schottky diode in the semiconductor substrate; and a control gate covering a portion of the Schottky diode and the first doped region on the semiconductor substrate. |
| 地址 |
Hsin-Chu City TW |
