Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same

摘要

A method of making a tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the frustoconical protrusion structure and extends to a bottom portion of the frustoconical protrusion structure as a raised drain region. A source region is formed as a top portion of the frustoconical protrusion structure. A series connection and a parallel connection are made among TFET devices units.

主权项

1. A semiconductor device comprising:
a substrate; a first area over the substrate, having a first plurality of isolated protrusion structures disposed over a first drain region; a second area over the substrate, having a second plurality of isolated protrusion structures disposed over a second drain region; a gate stack for each of the protrusion structures, each wrapping over a middle portion of the respective protrusion structure, wherein the gate stacks in the first area are separated from each other, and wherein the gate stacks in the second area are connected to each other; and source regions at a top portion of the protrusion structures; a first interconnect for connecting regions in the first area in series; and a second interconnect for connecting regions in the second area in parallel.