| 发明名称 |
OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE |
| 摘要 |
A Schottky barrier diode element having an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, wherein the oxide semiconductor layer contains a polycrystalline oxide and/or an amorphous oxide having gallium (Ga) as the principal component thereof. |
| 申请公布号 |
WO2015025500(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
WO2014JP04154 |
申请日期 |
2014.08.08 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
TOMAI, SHIGEKAZU;SHIBATA, MASATOSHI;KAWASHIMA, EMI;YANO, KOKI;HAYASAKA, HIROMI |
| 分类号 |
H01L29/47;H01L29/872 |
主分类号 |
H01L29/47 |
| 代理机构 |
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