A method of forming a semiconductor device, the method includes depositing a layer of metal over one or more channel regions of respective one or more transistors in a substrate, the layer of metal having a first region and a second region; lowering height of the first region of the layer of metal; forming an insulating layer over the first region of lowered height, the insulating layer being formed to have a top surface coplanar with the second region of the layer of metal; and forming at least one contact to a source/drain region of the one or more transistors. Structure of the semiconductor device formed thereby is also provided.
申请公布号
WO2015024478(A1)
申请公布日期
2015.02.26
申请号
WO2014CN84442
申请日期
2014.08.15
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM (CHINA) CO., LIMITED