| 摘要 |
<p>The invention relates to a copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution, comprising: based on the total weight of the etching solution, 12-35 wt% of hydrogen peroxide, 0.5-5 wt% of sulfate, 0.5-5 wt% of phosphate, 0.0001-0.5 wt% of fluorine ion, 0.1-5 wt% of first water-soluble cyclic amine, 0.1-5 wt% of chelating agent, 0.1-5 wt% of second water-soluble cyclicamine, 0.1-5 wt% of diol, and deionized water, the total weight of the etching solution being 100 wt%. The invention relates to the copper, copper/molybdenum, or copper/molybdenum alloy electrode layer etching solution for use in the process of etching gate electrode, source electrode, or collecting electrode of the thin film transistor (TFT) in the liquid crystal display device or etching metallic wire.</p> |
