发明名称 Gas sensor and member using grain growth metal oxide material semiconductor nano structure, and manufacturing method thereof
摘要 <p>The present invention relates to a member for a gas sensor, a gas sensor using the same, and a method of manufacturing the same. More specifically, the present invention relates to a member for a gas sensor using a metal-oxide semiconductor nanostructure formed including a grown nanoparticle, a gas sensor, and a method of manufacturing the same. The present invention relates to a method of manufacturing a member for a gas sensor using a metal-oxide semiconductor nanostructure which includes steps of (a) forming a nanostructure formed of multiple metal-oxide semiconductor nanoparticles; and (b) growing the metal-oxide semiconductor nanoparticles on the nanostructure by an optical sintering process, wherein a gas pocket through which gas can enter and exit among the metal-oxide semiconductor nanoparticles is formed due to the metal-oxide semiconductor nanoparticles being grown by the optical sintering process, thereby having a high sensitivity characteristic capable of detecting infinitesimal amount of gas by a simple detection process, having excellent selectivity to detect various gases, having mechanical stability by being attached to a sensor substrate, and mass-producing a member for a gas sensor within a short time.</p>
申请公布号 KR20150020331(A) 申请公布日期 2015.02.26
申请号 KR20130095118 申请日期 2013.08.12
申请人 发明人
分类号 B82B3/00;G01N27/12 主分类号 B82B3/00
代理机构 代理人
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