发明名称 SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION
摘要 Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.
申请公布号 US2015054082(A1) 申请公布日期 2015.02.26
申请号 US201414529506 申请日期 2014.10.31
申请人 International Business Machines Corporation 发明人 Cheng Kangguo;Haran Balasubramanian Pranatharthi;Li Junjun;Ponoth Shom;Standaert Theodorus Eduardus;Yamashita Tenko
分类号 H01L27/12;H01L23/367;H01L23/373;H01L29/06;H01L29/423 主分类号 H01L27/12
代理机构 代理人
主权项 1. A semiconductor structure comprising: a bulk semiconductor substrate; an insulator layer disposed on the bulk semiconductor substrate; a semiconductor-on-insulator layer disposed on the insulator layer; a plurality of deep trenches formed within the semiconductor structure, each deep trench of the plurality of deep trenches extending from semiconductor-on-insulator into the bulk semiconductor substrate; a first terminal region formed on a perimeter region of the semiconductor structure; a second terminal region formed on a central region of the semiconductor structure; wherein a first subset of the plurality of deep trenches is disposed within the first terminal region; and wherein a second subset of the plurality of deep trenches is disposed within the second terminal region.
地址 Armonk NY US