| 发明名称 |
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING |
| 摘要 |
Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers. The structure further includes an epitaxially grown straining material directly on the polysilicon layer and between portions of the sidewalls. The epitaxially grown straining material, in a relaxed state, strains the polysilicon layer. |
| 申请公布号 |
US2015054028(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414515981 |
申请日期 |
2014.10.16 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DYER Thomas W.;YANG Haining S. |
| 分类号 |
H01L29/78;H01L29/167;H01L27/092;H01L29/16 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising a relaxed, epitaxially grown straining material on a polysilicon layer of a gate stack structure. |
| 地址 |
Armonk NY US |
