发明名称 |
LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE CRYSTAL SUBSTRATE AND A GROUP-III NITRIDE SINGLE CRYSTAL LAYER |
摘要 |
A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved. |
申请公布号 |
US2015053996(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201214389185 |
申请日期 |
2012.11.01 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ;DENSO CORPORATION |
发明人 |
Narita Tetsuo;Ito Kenji;Tomita Kazuyoshi;Otake Nobuyuki;Hoshi Shinichi;Matsui Masaki |
分类号 |
H01L29/20;C30B29/40;C30B25/18;C30B25/08;H01L29/04;H01L21/02 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Nagakute-shi, Aichi-ken JP |