| 摘要 |
A memory array (101) includes a plurality of twin cells (104), which hold binary data using a difference in threshold voltages between the same, comprising a first storage element (102) and a second storage element (103), which are each electrically rewritable. An output circuit (105), upon receiving a read request for a twin cell (104), masks storage data of the twin cell (104) and outputs the data if the threshold voltage of the first storage element (102) constituting the twin cell (104) is smaller than an erasure assessment level and the threshold voltage of the second storage element (103) constituting the twin cell (104) is smaller than the erasure assessment level. |
