| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which stores data by using a transistor having a low leakage current between off-state source-drain for a write transistor.SOLUTION: A semiconductor device comprises a matrix formed by using a plurality of storage cells in each of which a drain of a write transistor WTr(n,m) and a gate of a read transistor RTr(n,m) are connected, and the drain and one electrode of a capacitor C(n,m) are connected, in which a gate of the write transistor is connected to a write word line Qn, and a source of the write transistor and a source of the read transistor are connected to a bit line Rm, and a drain of the read transistor is connected to a read word line Pn. In this case, conductivity types of the write transistor and the read transistor are different from each other. |
