发明名称 |
SET AND RESET OPERATION IN PHASE CHANGE MEMORY AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS |
摘要 |
Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In an embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device, wherein the memory cell is coupled with a capacitor and subsequent to said increasing the current, generating a transient current through the memory cell by discharge of the capacitor to reset the memory cell. In another embodiment, a method includes increasing a current through a memory cell of a phase change memory (PCM) device and controlling the current to be greater than a threshold current and lower than a hold current of the memory cell to set the memory cell. Other embodiments may be described and/or claimed. |
申请公布号 |
US2015055407(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201314010417 |
申请日期 |
2013.08.26 |
申请人 |
Mantegazza Davide;Pangal Kiran;Joyce Gerard H.;Damle Prashant;Kau Derchang;Fugazza Davide |
发明人 |
Mantegazza Davide;Pangal Kiran;Joyce Gerard H.;Damle Prashant;Kau Derchang;Fugazza Davide |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
increasing a current through a memory cell of a phase change memory (PCM) device, wherein the memory cell is coupled with a capacitor; and subsequent to said increasing the current, generating a transient current through the memory cell by discharge of the capacitor to reset the memory cell. |
地址 |
Palo Alto CA US |