发明名称 Gas Phase Enhancement of Emission Color Quality in Solid State LEDs
摘要 Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.
申请公布号 US2015053916(A1) 申请公布日期 2015.02.26
申请号 US201414463928 申请日期 2014.08.20
申请人 Nanoco Technologies Ltd. 发明人 Pickett Nigel;Gresty Nathalie
分类号 H01L33/06;H01L33/30;H01L33/28;H01L33/00 主分类号 H01L33/06
代理机构 代理人
主权项 1. A composition comprising: a light-emitting semiconductor material having pores therein; and quantum dots (QDs) disposed within the pores; wherein the composition is free of solvent.
地址 Manchester GB