| 发明名称 |
MANUFACTURING NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR |
| 摘要 |
An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. |
| 申请公布号 |
US2015053860(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414501983 |
申请日期 |
2014.09.30 |
| 申请人 |
ZENA TECHNOLOGIES, INC. |
发明人 |
Duane Peter;Yu Young-June;Wober Munib |
| 分类号 |
H01L31/0352;H01L31/101;G01J1/42;H01L27/146;G01J5/20;H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0352 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising
a substrate having a front side, and a back side; a nanowire disposed on or in the back side of the substrate; an image sensing circuit disposed on or in the front side, wherein the nanowire is configured to be a channel to transmit wavelengths up to a selective wavelength. |
| 地址 |
Cambridge MA US |
