| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer. |
| 申请公布号 |
US2015056768(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414516592 |
申请日期 |
2014.10.17 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsu Cheng-Yuan;Ren CHI;Wen Tzeng-Fei |
| 分类号 |
H01L29/66;H01L21/266;H01L21/28;H01L29/423 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
sequentially forming a gate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer. |
| 地址 |
Hsin-Chu City TW |
