ANNEALING FOR DAMAGE FREE LASER PROCESSING FOR HIGH EFFICIENCY SOLAR CELLS

摘要

Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

主权项

1. A method for patterning an electrically insulating layer on a semiconductor substrate, said method comprising:
providing a semiconductor substrate having n-type doping; depositing a first layer of borosilicate glass or a borosilicate/undoped glass stack on said semiconductor substrate; selectively ablating said first layer of borosilicate glass or borosilicate/undoped glass stack with a pulsed laser in a first emitter ablation pattern comprising a plurality of first ablation spots; annealing said first ablation spots; depositing a second layer of borosilicate glass or a borosilicate/undoped glass stack on said first layer of borosilicate glass or a borosilicate/undoped glass stack; selectively ablating said second layer of borosilicate glass or borosilicate/undoped glass stack with a pulsed laser in a second base ablation pattern comprising a plurality of second ablation spots; and, annealing said second ablation spots.