METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE

摘要

An electronic circuit on a strained semiconductor substrate, includes: electronic components on a first surface of a semiconductor substrate; and at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.

主权项

1. A strained integrated device structure comprising:
integrated devices formed at a first surface of a semiconductor substrate; porous semiconductor material formed at a first surface of a semiconductor support, wherein the semiconductor support is bonded to a second surface of the semiconductor substrate; and a region of strained semiconductor located between the porous semiconductor material and the integrated devices.