发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 Provided are a semiconductor device in which a solid-state image sensing element having a backside-illuminated structure and capacitor elements storing therein some of the charges supplied from light receiving elements has further improved reliability and a manufacturing method thereof. In the solid-state image sensing element of the semiconductor device, first and second substrates are joined together at a junction surface. The first substrate is formed with photodiodes. The second substrate is formed with the capacitor elements. The photodiodes and the capacitor elements are placed to be opposed to each other. In the first substrate, first coupling portions for coupling to the second substrate are placed. In the second substrate, second coupling portions for coupling to the first substrate are placed. A first gap portion between the first coupling portions and a second gap portion between the second coupling portions are placed to overlap a first light blocking film.
申请公布号 US2015054110(A1) 申请公布日期 2015.02.26
申请号 US201414464423 申请日期 2014.08.20
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KASHIHARA Keiichiro
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first substrate forming at least a part of each of a plurality of pixels including a plurality of light receiving elements in each of which photoelectric conversion is performed; and a second substrate having capacitor elements which store therein charges supplied from the light receiving elements, wherein the first substrate and the second substrate are joined together at a junction surface therebetween so as to be integrated with each other, wherein the light receiving elements and the capacitor elements are placed so as to be opposed to each other in a direction perpendicular to the junction surface, wherein the capacitor elements are at positions away from a surface of the second substrate corresponding to the junction surface, wherein the first substrate includes: a light-receiving-element-side light blocking film placed on a side of each of the light receiving elements where light is supplied to the light receiving element so as to block the light supplied to the light receiving element; and a plurality of first coupling portions formed at a surface of the first substrate corresponding to the junction surface so as to electrically couple the first substrate and the second substrate to each other, wherein the second substrate includes: a plurality of second coupling portions formed at the surface of the second substrate corresponding to the junction surface so as to be electrically coupled to the first coupling portions, and wherein a first gap portion interposed between the first coupling portions and a second gap portion interposed between the second coupling portions, each of which is present outside regions overlapping the light receiving elements in planar view, are placed so as to overlap the light-receiving-element-side light blocking film in the direction perpendicular to the junction surface at which the first substrate and the second substrate are joined together.
地址 Kawasaki-shi JP