| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship. |
| 申请公布号 |
US2015054075(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414501244 |
申请日期 |
2014.09.30 |
| 申请人 |
Ohmi Tadahiro;Tanaka Hiroaki |
发明人 |
Ohmi Tadahiro;Tanaka Hiroaki |
| 分类号 |
H01L29/10;H01L29/417;H01L29/45;H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an n-type transistor formed on a (551) surface of a silicon substrate, wherein a silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 8.5 nm, a metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive), and a barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship. |
| 地址 |
Sendai-shi JP |
