| 摘要 |
The present invention discloses an electrostatic discharge (ESD) protection device and a manufacturing method thereof. The ESD protection device includes: a P-type well, a gate structure, an N-type source, an N-type drain, and a P-type lightly doped drain. The P-type lightly doped drain is formed in the P-type well, and at least part of the P-type lightly doped drain is beneath a spacer of the gate structure to reduce a trigger voltage of the electrostatic discharge protection device. |
| 主权项 |
1. An electrostatic discharge (ESD) protection device, which is formed in a semiconductor substrate, wherein the semiconductor substrate has an upper surface, the ESD protection device comprising:
a P-type well, which is formed beneath the upper surface; a gate structure, which is formed on the upper surface, and part of the P-type well is located beneath the gate structure; an N-type source, which is formed in the P-type well beneath the upper surface, and the N-type source is located at one side of the gate structure; an N-type drain, which is formed in the P-type well beneath the upper surface, and the N-type drain is located at another side of the gate structure; wherein the gate structure separates the N-type source and the N-type drain, and the gate structure includes:
a dielectric layer, which is formed on the upper surface;a conductive stack layer, which is formed on the dielectric layer, as a gate electrode; anda spacer layer, which is formed on sidewalls of the conductive stack layer; and a first P-type lightly doped drain, which is formed in the P-type well beneath the upper surface and directly contacts the P-type well, and at least part of the first P-type lightly doped drain is located beneath the spacer layer; wherein the first P-type lightly doped drain and the N-type drain form a PN junction, which is the first location to break down when the N-type drain receives a voltage caused by static charges, to trigger an ESD protection. |
