Integrated Circuitry Comprising Nonvolatile Memory Cells And Methods Of Forming A Nonvolatile Memory Cell

摘要

A method of forming a gate construction of a recessed access device includes forming a pair of sidewall spacers laterally over opposing sidewalls of a gate dielectric and elevationally over first conductive gate material. The gate dielectric, the first conductive gate material, and the sidewall spacers are received within a trench formed in semiconductive material. Second conductive gate material is deposited within the semiconductive material trench between the pair of sidewall spacers in electrical connection with the first conductive gate material. Other implementations are disclosed, including recessed access device gate constructions independent of method of manufacture.

主权项

1. An integrated circuit comprising a nonvolatile memory cell, the nonvolatile memory cell comprising:
a first electrode, a second electrode, and an ion conductive material between the first and second electrodes; the second electrode having an electrochemically active surface directly against the ion conductive material and an electrochemically inactive surface directly against the ion conductive material; the second electrode being elevationally outward of the first electrode; and the first electrode extending laterally in a first direction, the ion conductive material extending laterally in a second direction different from and intersecting the first direction, the first electrode being directly against the ion conductive material only where the first and second directions intersect, the second electrode having a lateral outermost sidewall and the ion conductive material having a transverse outermost sidewall directly against the second electrode lateral outermost sidewall, the second electrode only being directly against the ion conductive material at the transverse outermost sidewall of the ion conductive material.