发明名称 |
POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a plurality of epitaxial islands arranged around the cell region, and a grid type epitaxial layer in the peripheral termination region. The grid type epitaxial layer separates the plurality of epitaxial islands from one another. |
申请公布号 |
US2015054062(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414509071 |
申请日期 |
2014.10.08 |
申请人 |
Anpec Electronics Corporation |
发明人 |
Lin Yung-Fa;Chang Chia-Hao |
分类号 |
H01L29/06;H01L29/49;H01L29/40;H01L29/78;H01L27/088 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A power semiconductor device, comprising:
a cell region on a semiconductor substrate; at least one transistor device disposed in the cell region; a peripheral termination region surrounding the cell region; a plurality of islands of first epitaxial layer disposed in the peripheral termination region; and a grid-shaped second epitaxial layer in the peripheral termination region, the grid-shaped second epitaxial layer surrounds each of the plurality of islands of first epitaxial layer to thereby separate the plurality of islands of first epitaxial layer from one another. |
地址 |
Hsin-Chu TW |