发明名称 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME
摘要 A thin film transistor substrate includes a first substrate which includes a transmissive area and a reflective area, a common electrode disposed on the first substrate, a pixel electrode overlapped with and insulated from the common electrode, and a reflective portion which is disposed on the reflective area and includes a lower electrode which includes a first transparent conductive material, a metal layer disposed on the lower electrode, and an upper electrode disposed on the metal layer and including a second transparent conductive material different from the first transparent conductive material.
申请公布号 US2015055066(A1) 申请公布日期 2015.02.26
申请号 US201414165856 申请日期 2014.01.28
申请人 Samsung Display Co., Ltd. 发明人 YANG SungHoon;SONG JEANHO;KIM Bong-Kyun
分类号 G02F1/1335;G02F1/1368 主分类号 G02F1/1335
代理机构 代理人
主权项 1. A thin film transistor substrate comprising: a first substrate which includes a transmissive area and a reflective area; a common electrode disposed on the first substrate; a pixel electrode overlapped with and insulated from the common electrode; and a reflective portion which is disposed on the reflective area and comprises: a lower electrode which includes a first transparent conductive material;a metal layer disposed on the lower electrode; andan upper electrode disposed on the metal layer and including a second transparent conductive material different from the first transparent conductive material.
地址 Yongin-City KR