发明名称 |
SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DOPANT COMPOSITION, DOPANT INJECTION LAYER, AND METHOD FOR FORMING DOPED LAYER |
摘要 |
The present invention provides a method for producing a semiconductor laminate including a substrate having formed thereon a silicon layer with small surface unevenness and high continuity. The method of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate includes (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5. |
申请公布号 |
US2015053263(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201314389187 |
申请日期 |
2013.03.29 |
申请人 |
TEIJIN LIMITED |
发明人 |
Imamura Tetsuya;Tomizawa Yuka;Ikeda Yoshinori |
分类号 |
H01L21/02;H01L31/0216;H01L29/66;H01L31/20;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka-shi, Osaka JP |