发明名称 |
A method for treating a substrate and a substrate |
摘要 |
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing lll-As, lll-Sb or lll-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550 °C and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET. |
申请公布号 |
AU2011327960(B2) |
申请公布日期 |
2015.02.26 |
申请号 |
AU20110327960 |
申请日期 |
2011.11.08 |
申请人 |
TURUN YLIOPISTO |
发明人 |
LAUKKANEN, PEKKA;LANG, JOUKO;PUNKKINEN, MARKO;TUOMINEN, MARJUKKA;TUOMINEN, VEIKKO;DAHL, JOHNNY;VAYRYNEN, JUHANI |
分类号 |
H01L21/316;H01L21/02 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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