NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can decrease the occurrence of breaking of a contact part which is connected to a source electrode and a drain electrode.SOLUTION: A nitride semiconductor device comprises: first source contact parts (21A) formed on a partial region of each source electrode (11) and an insulation film; and first drain contact parts (22A) formed on a partial region of each drain electrode (12) and the insulation film. The first source contact parts (21A) lie on a central part of the source electrode (11) in a longer direction. The first drain contact parts (22A) lie on a central part of the drain electrode (12) in a longer direction.